6月5日“创源”大讲堂：Parasitic Capacitance in Medium-Voltage Inductors
报告题目：Parasitic Capacitance in Medium-Voltage Inductors
报告人：Hongbo Zhao Postdoc, Incoming Assistant Professor, Department of Energy, Aalborg University
The history of power electronics is written by wide-bandgap semiconductor devices now. The advantages of wide-bandgap devices are very clear, but what are the newly raised challenges? Among several challenges, the capacitive couplings could become an emerging issue, since they can easily introduce undesired capacitive current and thus cause unacceptable EMI performance, or they can also cause extra losses and therefore block the best performance of wide-bandgap devices.
The inductors, as one of the most important components, and this presentation will give a systematic review of parasitic capacitance in medium-voltage inductors. The impacts, unique challenges, and modeling methods of parasitic capacitance in medium-voltage inductors will be introduced, and the possible methods for reducing parasitic capacitance will also be suggested.
Dr. Hongbo Zhao received the Ph.D. degree in Power Electronics from Aalborg University, Denmark in 2021. He was a visiting student at the University of Texas at Austin and a visiting scholar at the University of Galway. Currently, he is a Postdoc Researcher at Aalborg University, Aalborg, Denmark. He was the winner of best magnetic design awarded by Frenetic in 2022. He became a Villum Fellow in 2023 as the recipient the Villum Experiment Grant. He is the principal investigator of managaing multiple projects, with a funding scale around 4 million Chinese Yuan. He is also an incoming assistant professor at AAU Energy.
His research interests include high-frequency modeling and analysis of high-power magnetics and filters, as well as medium-voltage power electronics packaging.